Modelling the effects of electronic parameters on the efficiency of amorphous silicon solar cells under AM1.5G spectrum
نویسندگان
چکیده
The purpose of this paper is to model the performance of thin film amorphous silicon (a-Si:H) solar cells under AM1.5G spectral conditions. In this work, a numerical model for the investigation of thin film amorphous silicon p-i-n cells has been developed. The light absorption is treated as a non-uniform, exponentially decaying function, which also allows to use spectral ensembles to be investigated. Based on the absorption profile, continuity and current density equations are solved numerically. This allows the calculation of the quantum efficiency of the device. The model is being validated against measurements on an a-Si:H test cell of known configuration and I-V characteristics. Then the established model is used to investigate the effects of i-layer thickness, surface recombination and electron and hole mobilities, under AM1.5G spectral irradiance, on the efficiency of a-Si thin film solar cells. The key parameters in optimising this type of a-Si:H cell are then reviewed.
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